2SJ601 datasheet

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PostPosted: Mon Mar 12, 2012 6:11    Post subject: 2SJ601 datasheet Reply with quote
2SJ601 datasheet

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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
FEATURES
 Low on-state resistance:
RDS(on)1 = 31 m MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 m MAX. (VGS = –4.0 V, ID = –18 A)
 Low Ciss: Ciss = 3300 pF TYP.
 Built-in gate protection diode
 TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ601 TO-251
2SJ601-Z TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS –60 V Gate to Source Voltage (VGS = 0 V) VGSS  20 V
Drain Current (DC) (TC = 25°C) ID(DC)  36 A
Drain Current (pulse) Note1 ID(pulse)  120 A
Total Power Dissipation (TC = 25°C) PT 65 W Total Power Dissipation (TA = 25°C) PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS –35 A
Single Avalanche Energy Note2 EAS 123 mJ
Notes 1. PW  10 s, Duty cycle  1%
2. Starting Tch = 25°C, RG = 25 , VGS = –20 V → 0 V
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14646EJ1V0DS00 (1st edition) Date Published November 2000 NS CP(K) Printed in Japan
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V –10 A Gate Leakage Current IGSS VGS =  20 V, VDS = 0 V  10 A Gate Cut-off Voltage VGS(off) VDS = –10 V, ID = –1 mA 1.5 2.0 2.5 V
Forward Transfer Admittance | yfs | VDS = –10 V, ID = –18 A 15 30 S
Drain to Source On-state Resistance
RDS(on)1 VGS = –10 V, ID = –18 A 25 31 m
RDS(on)2 VGS = –4.0 V, ID = –18 A 32 46 m
Input Capacitance Ciss VDS = –10 V 3300 pF
Output Capacitance Coss VGS = 0 V 580 pF
Reverse Transfer Capacitance Crss f = 1 MHz 230 pF
Turn-on Delay Time td(on) VDD = –30 V, ID = –18 A 11 ns
Rise Time tr VGS(on) = –10 V 12 ns
Turn-off Delay Time td(off) RG = 0  80 ns
Fall Time tf 53 ns
Total Gate Charge QG VDD= –48 V 63 nC
Gate to Source Charge QGS VGS = –10 V 10 nC
Gate to Drain Charge QGD ID = –36 A 16 nC
Body Diode Forward Voltage VF(S-D) IF = –36 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = –36 A, VGS = 0 V 52 ns
Reverse Recovery Charge Qrr di/dt = –100 A / s 108 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG VGS = –20 V  0 V
D.U.T. RG = 25 
D.U.T. RG
Wave Form
VGS ()
VDS ()
VGS(on)
VGS ()
Wave Form
10% 10%
Starting Tch
 = 1 s
Duty Cycle  1%
td(on) tr td(off) t f
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA
PG. 50 
2 Preliminary Data Sheet D14646EJ1V0DS
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
6.5±0.2
5.0±0.2
2.3±0.2
0.5±0.1
6.5±0.2
5.0±0.2
2.3±0.2
0.5±0.1
1 2 3
1.1±0.2
1 2 3
2.3 2.3
0.5-0.1
0.5-0.1
2.Drain
3.Source
4.Fin (Drain)
1.1±0.2
2.3 2.3
MAX. MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Gate Protection Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Preliminary Data Sheet D14646EJ1V0DS 3
 The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.
 No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
 NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.
 Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.
 While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.
 NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
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